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 CYStech Electronics Corp.
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC4501Q8
Description
The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
* Simple drive requirement * Low on-resistance * Fast switching speed * Pb-free package
Applications
* Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTC4501Q8
Outline
SOP-8
GGate SSource DDrain
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C Continuous Drain Current @TA=70 C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja Limits N-channel 30 20 7 5.8 20
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 2/10
P-channel -30 16 -5.3 -4.7 -20
Unit V V A A A W W / C C C C/W
(Note 1) (Note 1)
2 0.016 -55~+150 -55~+150 62.5
Note : 1.Surface mounted on 1 in copper pad of FR-4 board, 135C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. 30 1.0 Typ. 0.02 13 645 150 95 6 5.2 18.8 4.4 8.4 2.1 4.7 Max. 3.0 100 1 25 28 42 1.2 1.67 Unit V V/C V nA A A m S Test Conditions VGS=0, ID=250A Reference to 25C, ID=1mA VDS=VGS, ID=250A VGS=20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=70C ID=7A, VGS=10V ID=5A, VGS=4.5V VDS=10V, ID=7A
*GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS MTC4501Q8
pF
VDS=25V, VGS=0, f=1MHz VDS=15V, ID=1A, VGS=10V, RG=3.3, RD=15
ns
nC
VDS=24V, ID=7A, VGS=4.5V
V A
VGS=0V, IS=7A VD=VG=0V, VS=1.2V
*Pulse Test : Pulse Width 300s, Duty Cycle2%
CYStek Product Specification
CYStech Electronics Corp.
Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. -30 -1.0 Typ. -0.028 8.5 790 440 120 12 20 45 27 20 3.5 2 Max. -3.0 100 -1 -25 50 90 -1.2 -1.67 Unit V V/C V nA A A m S
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 3/10
P-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Test Conditions VGS=0, ID=-250A Reference to 25C, ID=-1mA VDS=VGS, ID=-250A VGS=16V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0, Tj=70C ID=-5.3A, VGS=-10V ID=-4.2A, VGS=-4.5V VDS=-10V, ID=-5.3A
*GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS -
pF ns ns ns ns nC nC nC V A
VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=6, RD=15
VDS=-15V, ID=-5.3A, VGS=-10V
VGS=0V, IS=-2.6A VD=VG=0V, VS=-1.2V
*Pulse Test : Pulse Width 300s, Duty Cycle2%
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
N-channel Characteristic Curves
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 4/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
N-channel Characteristic Curves(Cont.)
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 5/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
N-channel Characteristic Curves(Cont.)
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 6/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
P-channel Characteristic Curves
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 7/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
P-channel Characteristic Curves(Cont.)
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 8/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
P-channel Characteristic Curves(Cont.)
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 9/10
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
SOP-8 Dimension
Top View A Right side View G
Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 10/10
Marking:
I B C H
Device Name Date Code
4501SS
J D Front View
Part A
E
Part A
K L N O
8-Lead SOP-8 Plastic Package CYStek Package Code: Q8
M
F
*: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007
Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10
DIM I J K L M N O
Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059
Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC4501Q8
CYStek Product Specification


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